Search results for "Solid State Properties"
showing 10 items of 12 documents
Characterization of the Solid State Properties of Anodic Oxides on Magnetron Sputtered Ta, Nb and Ta-Nb Alloys
2012
Tantalum oxide, niobium oxide and Ta-Nb containing mixed oxides were grown by anodizing sputter-deposited Ta, Nb and Ta-Nb alloys of different compositions. A photoelectrochemical investigation was performed in order to estimate the band gap and the flat band potential of the oxides as a function of their composition. The band gap of the investigated Ta-Nb containing mixed oxides changed monotonically between those estimated for Ta2O5 (4.1 eV) and Nb2O5 (3.4 eV) and in agreement with a proposed correlation between the Band gap of an oxide and the difference of electronegativity of the oxide constituents. From the differential capacitance curves recorded in a wide range of electrode potentia…
The Influence of Composition in Determining the Solid State Properties of Al Mixed Oxides
2011
Electrochemical fabrication of high k Al-Ta mixed oxides
2014
Synergistic Use of Electrochemical Impedance Spectroscopy and Photoelectrochemical Measurements for Studying Solid State Properties of Anodic HfO2
2017
Within the past years, intense research has been carried out on HfO2 as high k material, promising candidate to replace SiO2 as gate dielectric in CMOS based devices (1), and as metal oxide for resistive random access memory (ReRAM) (2). For both technological applications compact, uniform and flat oxides are necessary, and a detailed understanding of their physical properties as a function of the fabrication conditions is strongly. Hafnia performance can be significantly influenced by carrier trapping taking place at pre-existing precursors states (induced by oxygen vacancies, interstitial ions, impurities acting as dopants), or by self-trapping in a perfect lattice, where the potential we…
Characterization of the Solid State Properties of Anodic Oxides on Ta-Nb Alloys as a Function of the Anodizing Conditions
2011
Tantalum oxide, niobium oxide and Ta-Nb containing mixed oxides were grown by anodizing sputter-deposited TaxNb(1-x) alloys with 0 ≤ x ≤ 1. A photoelectrochemical investigation was performed in order to estimate the band gap values of the oxides as a function of their composition as well as to estimate their flat band potential. Differential capacitance curves were recorded for all the investigated oxides in a wide range of electrode potential and for several frequencies of the alternative signal. The dependence of C on the applied potential and a.c. frequency was interpreted on the basis of amorphous semiconductor Schottky barrier, and allowed to estimate the dielectric constant of the inv…
Effect of Incorporation of Foreign Species on the Solid State Properties of Anodic Films on Ti
2014
Characterization of the Solid State Properties of Anodic Oxides Grown on Sputter-deposited Al-Nb Alloys.
2012
Solid State Properties of Anodic Hf-Nb Mixed Oxides
2016
In last decades, HfO2 and Nb2O5 have been extensively studied due to their many potential applications, from corrosion protection to CMOS (as high-k gate dielectrics) [1-2] and ReRAM technologies [3-4]. For these technological applications compact, uniform and flat oxides are necessary, and a detailed understanding of their physical properties as a function of the fabrication conditions is needful. Scientific community gradually shifted its interest from pure metal oxides to mixed metal oxides trying to exploit the advantages of pure oxides and to suppress their disadvantages. Mixed oxides can be grown on valve metals alloys by anodizing, a simple and low cost electrochemical process for pr…